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Thin Film
Deposition
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Atomic layer deposition
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Magnetron plasma sputtering
- Four-substrate, three-gun, sequential sputtering general-purpose chamber
- Single-substrate, pulsed DC power supply with RF back etch
- Co- and reactive (O2/N2) sputtering
- Four-gun, load-locked, automated, single-substrate system with RF back etch
Electron-beam evaporation
- Single-substrate, four-pocket system for deposition of metals and dielectrics.
- Glancing-angle deposition (GLAD) system for nanostructured thin films (automated substrate tilt and rotation)
Low-pressure chemical vapour deposition
- Automated batch processing system
- Deposition of low-stress nitride, stoichiometric nitride, poly-Si, amorphous Si, and boron-doped poly-Si on 4” and 6” wafers
- Annealing furnaces
Thermal oxidation
- Wet and dry oxidation of Si for high-quality oxide growth on 4” and 6” wafers
- General-purpose anneal
- Rapid thermal processing/annealing
Plasma-enhanced chemical vapour deposition
- SiO2, SiOxNy, SiNx, and amorphous Si deposition
- Tunable stoichiometry and film stress
- Substrates: small pieces up to 6” wafers
- Optical endpoint detection
Thermal organic evaporation
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