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Thin Film 
Deposition

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Atomic layer deposition

 

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Magnetron plasma sputtering

 

  • Four-substrate, three-gun, sequential sputtering general-purpose chamber
  • Single-substrate, pulsed DC power supply with RF back etch
  • Co- and reactive (O2/N2) sputtering
  • Four-gun, load-locked, automated, single-substrate system with RF back etch
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Electron-beam evaporation

 

  • Single-substrate, four-pocket system for deposition of metals and dielectrics.
  • Glancing-angle deposition (GLAD) system for nanostructured thin films (automated substrate tilt and rotation)
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Low-pressure chemical vapour deposition

 

  • Automated batch processing system
  • Deposition of low-stress nitride, stoichiometric nitride, poly-Si, amorphous Si, and boron-doped poly-Si on 4” and 6” wafers 
  • Annealing furnaces
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Thermal oxidation

 

  • Wet and dry oxidation of Si for high-quality oxide growth on 4” and 6” wafers
  • General-purpose anneal 
  • Rapid thermal processing/annealing
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Plasma-enhanced chemical vapour deposition

 

  • SiO2, SiOxNy, SiNx, and amorphous Si deposition
  • Tunable stoichiometry and film stress
  • Substrates: small pieces up to 6” wafers
  • Optical endpoint detection
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Thermal organic evaporation

 

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